Cover Feature: Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination. (Chem. Eur. J. 38/2021)

Lesser is better: Multilayered heterostructures comprising of In2O3, SnO2, and one or two atomic layers Al2O3 were studied for their application in thin-film transistors (TFT). The cover image centers around the fabrication a multilayer thin film oxide aggregate which works as semiconductor transistor device. It composed different In2O3 fabricated using layer deposition (ALD) technique employs reaction suitable organometallic precursors with water, all originate from gas phase an individual molecular source (left upper side). rainbow reflects stability material against illumination. background depicts universal binary 0/1 code representing every-day use our modern society. More information can be found Full Paper by J. Schneider et al. (DOI: 10.1002/chem.202101126).